logo

BLF6G20-230PRN Datasheet, NXP Semiconductors

BLF6G20-230PRN transistor equivalent, power ldmos transistor.

BLF6G20-230PRN Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 84.44KB)

BLF6G20-230PRN Datasheet

Features and benefits

I Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a supply voltage of 28 V and an IDq of 2000 mA: N Average output power = 50 W N Power gain.

Application

at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common sourc.

Description

230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA .

Image gallery

BLF6G20-230PRN Page 1 BLF6G20-230PRN Page 2 BLF6G20-230PRN Page 3

TAGS

BLF6G20-230PRN
Power
LDMOS
transistor
NXP Semiconductors

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts