BLF6G20-230PRN Datasheet | NXP Semiconductors

description 230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a mon source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 1805 to 1880 VDS (V) 28 PL(AV) (W) 50 Gp (d B) 16.5 ηD (%) 29.5 ACPR (d Bc) - 35[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 d B at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a supply voltage of 28 V and an IDq of 2000 m A: N Average output power = 50 W N Power gain = 16.5 d B (typ) N Efficiency = 29.5 % N ACPR = - 35 d Bc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (1800 MHz to 2000 MHz) I Internally matched for ease of use I pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (Ro HS) .. NXP Semiconductors Power LDMOS transistor 1.3 Applications I RF power amplifiers for W-CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning Description drain1 drain2 gate1 gate2 source [1] Simplified outline 1 2 5 Graphic symbol 3 3 4 4 5 2 sym117 [1] Connected to flange 3. Ordering information Table 3. Ordering information Package Na me BLF6G20-230PRN Description flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads Version SOT539A Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS Tstg Tcase Tj Parameter drain-source voltage gate-source voltage storage temperature case temperature junction temperature Conditions Min...