| Part number | BLF6G20-230PRN |
|---|---|
| Datasheet | BLF6G20-230PRN_NXPSemiconductors.pdf |
| File Size | 84.44 KB |
| Manufacturer | NXP Semiconductors |
| Description | Power LDMOS transistor |
|
|
230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Typical performance RF performance at Tcase = 25 °C in a mon source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 1805 to 1880 VDS (V) 28 PL(AV) (W) 50 Gp (dB) 16.5 ηD (%) 29.5 ACPR (dBc) −35[1] Test signal:.
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