BFU660F transistor equivalent, npn wideband silicon rf transistor.
* Low noise high linearity RF transistor
* High output third-order intercept point 27 dBm at 1.8 GHz
* 40 GHz fT silicon technology
1.3 Applications
* Ana.
in a plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD). Observe pre.
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Suc.
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