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BFU610F - NPN Wideband Silicon Germanium RF Transistor

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NXP

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BFU610F NPN Wideband Silicon Germanium RF Transistor by NXP - Datasheet Preview — Datasheet preview – BFU610F

Datasheet Details

Part number	BFU610F
Manufacturer	NXP
File Size	126.30 KB
Description	NPN Wideband Silicon Germanium RF Transistor
Datasheet	BFU610F Datasheet
Additional preview pages of the BFU610F datasheet.

Product details

Description

NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

Features

Low noise high gain microwave transistor.
Noise figure (NF) = 1.7 dB at 5.8 GHz.
High associated gain 13.5 dB at 5.8 GHz.
40 GHz fT silicon technology 1.3.

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Published: Jul 11, 2010 |