BFU610F transistor equivalent, npn wideband silicon germanium rf transistor.
* Low noise high gain microwave transistor
* Noise figure (NF) = 1.7 dB at 5.8 GHz
* High associated gain 13.5 dB at 5.8 GHz
* 40 GHz fT silicon technolog.
in a plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD). Observe pre.
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Suc.
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