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BFU520Y - Dual NPN wideband silicon RF transistor

Description

Dual NPN silicon RF transistor for high speed, low noise applications in a plastic, 6-pin SOT363 package.

The BFU520Y is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.

Features

  • Low noise, high breakdown RF transistor.
  • AEC-Q101 qualified.
  • Minimum noise figure (NFmin) = 0.65 dB at 900 MHz.
  • Maximum stable gain 19 dB at 900 MHz.
  • 11 GHz fT silicon technology 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BFU520Y Dual NPN wideband silicon RF transistor Rev. 1 — 20 February 2014 Product data sheet 1. Product profile 1.1 General description Dual NPN silicon RF transistor for high speed, low noise applications in a plastic, 6-pin SOT363 package. The BFU520Y is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benefits  Low noise, high breakdown RF transistor  AEC-Q101 qualified  Minimum noise figure (NFmin) = 0.65 dB at 900 MHz  Maximum stable gain 19 dB at 900 MHz  11 GHz fT silicon technology 1.3 Applications  Applications requiring high supply voltages and high breakdown voltages  Broadband differential amplifiers up to 2 GHz  Low noise amplifiers for ISM applications  ISM band oscillators 1.
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