PMZB670UPE datasheet, mosfet equivalent, NXP

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Features and benefits

* Very fast switching
* Low threshold voltage
* Trench MOSFET technology
* ESD protection up to 2 kV
* Ultra thin package profile of 0.37 mm 1.3 Appl.

Application

* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 1.4 Quick reference.

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. SO T8 1.2 Features and benefits
* Very fast switching
* Lo.

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