PMDXB950UPE datasheet, mosfet equivalent, NXP

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datasheet Download (Size : 274.18KB)

Features and benefits

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* Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent therma.

Application

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* Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference.

Description

Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits
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* Trench M.

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