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PMDXB950UPE Datasheet, nexperia

PMDXB950UPE mosfet equivalent, dual p-channel mosfet.

PMDXB950UPE Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 727.39KB)

PMDXB950UPE Datasheet

Features and benefits


* Trench MOSFET technology
* Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
* Exposed drain pad for excellent thermal conduction.

Application


* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits 4. Quick reference.

Description

Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits
* Trench MOSFET technology
* L.

Image gallery

PMDXB950UPE Page 1 PMDXB950UPE Page 2 PMDXB950UPE Page 3

TAGS

PMDXB950UPE
dual
P-channel
MOSFET
nexperia

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