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PMDXB550UNE - dual N-channel Trench MOSFET

Description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Low threshold voltage.
  • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm.
  • Trench MOSFET technology.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM.
  • Exposed drain pad for excellent thermal conduction 3.

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Full PDF Text Transcription

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DFN1010B- 6 PMDXB550UNE 30 V, dual N-channel Trench MOSFET 25 March 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Exposed drain pad for excellent thermal conduction 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1.
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