Datasheet4U Logo Datasheet4U.com

PMDXB550UNE - dual N-channel MOSFET

General Description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Low threshold voltage.
  • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm.
  • Trench MOSFET technology.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM.
  • Exposed drain pad for excellent thermal conduction 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PMDXB550UNE dual N-channel Trench MOSFET NXP
PMDXB1200UPE dual P-channel Trench MOSFET NXP
PMDXB600UNE dual N-channel Trench MOSFET NXP
PMDXB950UPE dual P-channel Trench MOSFET NXP
PMD02N60N N-Channel MOSFETs Potens semiconductor

Other Datasheets by Nexperia

Part Number Description
PMDXB1200UPE dual P-channel MOSFET
PMDXB600UNE Dual N-Channel MOSFET
PMDXB600UNEL dual N-channel MOSFET
PMDXB950UPE dual P-channel MOSFET
PMDXB950UPEL dual P-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PMDXB550UNE 30 V, dual N-channel Trench MOSFET 25 March 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Exposed drain pad for excellent thermal conduction 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1.