PHN210T fet equivalent, dual n-channel trenchmos intermediate level fet.
* Suitable for high frequency applications due to fast switching characteristics
* Suitable for logic level gate drive sources
* Suitable for low gate drive s.
only.
1.2 Features and benefits
* Suitable for high frequency applications due to fast switching characteristics
Dual intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
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