PBSS4240T Datasheet Text
DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS4240T 40 V; 2 A NPN low VCEsat (BISS) transistor
Product data sheet Supersedes data of 2001 Jul 13
2004 Jan 09
NXP Semiconductors
40 V; 2 A NPN low VCEsat (BISS) transistor
Product data sheet
Features
- Low collector-emitter saturation voltage
- High current capability
- Improved device reliability due to reduced heat generation
- Replacement for SOT89/SOT223 standard packaged transistors.
APPLICATIONS
- Supply line switching circuits
- Battery management applications
- DC/DC converter applications
- Strobe flash units
- Heavy duty battery powered equipment (motor and lamp drivers).
DESCRIPTION
NPN low VCEsat transistor in a SOT23 plastic package. PNP plement: PBSS5240T.
MARKING
TYPE NUMBER PBSS4240T
MARKING CODE(1) ZE-
Note
1.
- = p: Made in Hong Kong.
- = t: Made in Malaysia.
- = W: Made in China.
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