Download PBSS4240DPN Datasheet PDF
NXP Semiconductors
PBSS4240DPN
FEATURES - Low collector-emitter saturation voltage VCEsat - High collector current capability IC and ICM - High collector current gain h FE at high IC - High efficiency leading to reduced heat generation - Reduced printed-circuit board area requirements. APPLICATIONS - Power management: - plementary MOSFET driver - Dual supply line switching. - Peripheral driver: - Half and full bridge motor drivers - Multi-phase stepper motor driver. DESCRIPTION NPN/PNP low VCEsat transistor pair in a SOT457 (SC-74) plastic package. MARKING TYPE NUMBER PBSS4240DPN MARKING CODE M3 PINNING PIN 1, 4 2, 5 6, 3 emitter base collector VCEO IC ICRP ICM RCEsat emitter-collector voltage QUICK REFERENCE DATA MAX. SYMBOL PARAMETER NPN PNP 40 1.35 2 3 200 - 40 - 1.1 - 2 - 3 260 V A A A mΩ UNIT collector current (DC) repetitive peak collector current peak collector current equivalent on-resistance DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 6 handbook, halfpage TR2 TR1 1 Top...