Download PBSS4240V Datasheet PDF
NXP Semiconductors
PBSS4240V
FEATURES - Low collector-emitter saturation voltage VCEsat - High collector current capability IC and ICM - High collector current gain (h FE) at high IC - High efficiency leading to reduced heat generation - Reduced printed-circuit board area requirements. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICRP RCEsat collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. UNIT 40 V 2A 2A <190 mΩ APPLICATIONS - Power management: - DC-DC converter - Supply line switching - Battery charger - LCD back lighting. - Peripheral driver: - Driver in low supply voltage applications (e.g. lamps and LEDs) - Inductive load drivers (e.g. relay, buzzers and motors). DESCRIPTION NPN transistor providing low VCEsat and high current capability in a SOT666 plastic package. PNP plement: PBSS5240V. MARKING TYPE NUMBER PBSS4240V MARKING CODE 42 PINNING PIN 1 2 3 4 5 6 collector collector base emitter collector collector DESCRIPTION handbook, halfpage 6...