MW6S010GMR1 - RF Power Field Effect Transistor

NXP Semiconductors

Download the MW6S010GMR1 datasheet PDF. This datasheet also covers the MW6S010MR1 variant, as both devices belong to the same rf power field effect transistor family and are provided as variant models within a single manufacturer datasheet.

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MW6S010GMR1 rf power field effect transistor by NXP Semiconductors - Datasheet Preview — Note: The manufacturer provides a single datasheet file (MW6S010MR1-NXP.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	MW6S010GMR1
Manufacturer	NXP Semiconductors
File Size	711.54 KB
Description	RF Power Field Effect Transistor
Datasheet	MW6S010GMR1 Datasheet

Other Datasheets by NXP Semiconductors

Part Number	Description
MW6S010GNR1	RF Power Field Effect Transistors
MW6S010MR1	RF Power Field Effect Transistor
MW6S010NR1	RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Freescale Semiconductor Technical Data Replaced by MW6S010NR1/GNR1. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.