Datasheet4U Logo Datasheet4U.com

BUK7214-75B - Standard Level Fet

Description

N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.

Features

  • s Very low on-state resistance s 185 °C rated s Q101 compliant s Standard level compatible. 1.3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUK7210-55B N-Channel MOSFET NXP Semiconductors
BUK72150-55A N-channel TrenchMOS standard level FET nexperia
BUK7207-30B TrenchMOS standard level FET NXP Semiconductors
BUK7208-40B TrenchMOS standard level FET NXP Semiconductors
BUK7222-55A TrenchMOS standard level FET NXP Semiconductors

Other Datasheets by NXP Semiconductors

Part Number Description
BUK7212-55B TrenchMOS standard level FET
BUK7213-40A TrenchMOS standard level FET
BUK7215-55A N-channel TrenchMOS standard level FET
BUK7219-55A TrenchMOS standard level FET
BUK7227-100B TrenchMOS standard level FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BUK7214-75B TrenchMOS™ standard level FET M3D300 Rev. 01 — 26 January 2004 Product data 1. Product profile 1.1 Description www.DataSheet4U.com N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. 1.2 Features s Very low on-state resistance s 185 °C rated s Q101 compliant s Standard level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V, 24 V, and 42 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 133 mJ s ID ≤ 70 A s RDSon = 12.6 mΩ (typ) s Ptot ≤ 167 W. 2.
Published: |