BUK7219-55A
Description
N-channel enhancement mode field-effect power transistor in a plastic package using Trench MOS™1 technology, featuring very low on-state resistance. Product availability: BUK7219-55A in SOT428 (D-PAK).
2. Features s s s s Trench MOS™ technology Q101 pliant 175 °C rated Standard level patible.
3. Applications c c s Automotive and general purpose power switching: x 12 V and 24 V loads x Motors, lamps and solenoids.
4. Pinning information
Table 1: Pin 1 2 3 mb Pinning
- SOT428 (D-PAK), simplified outline and symbol Description gate (g) mb
Simplified outline
Symbol d drain (d) source (s) mounting base; connected to drain (d) g
2 1 Top view 3
MBK091
MBB076 s
SOT428 (D-PAK)
1.
Trench MOS is a trademark of Royal Philips Electronics.
Philips Semiconductors
Trench MOS™ standard level FET
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 °C; VGS = 5 V Tmb = 25 °C VGS = 10 V; ID = 25 A Tj = 175 °C Typ
- -
- - 16
- Max...
