BLP8G21S-160PV transistor equivalent, power ldmos transistor.
* Designed for broadband operation (1880 MHz to 2025 MHz)
* Decoupling leads to enable improved video bandwidth
* Excellent ruggedness
* High efficiency <.
at frequencies from 1880 MHz to 2025 MHz.
Table 1. Typical performance Typical RF performance per section at Tcase = 25.
160 W LDMOS transistor for base station applications at frequencies from 1880 MHz to 2025 MHz.
Table 1. Typical performance Typical RF performance per section at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq.
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