Datasheet Details
| Part number | BLP8G05S-200 |
|---|---|
| Manufacturer | Ampleon |
| File Size | 350.84 KB |
| Description | Power LDMOS transistor |
| Datasheet |
 BLP8G05S-200 Datasheet
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Description
200 W LDMOS power transistor for base stations applications at frequencies from 400 MHz to 500 MHz.
Table 1.
RF performance at Tcase = 25 C, IDq = 2 mA in an application circuit.
Features
- High efficiency.
- Excellent ruggedness.
- Excellent thermal stability.
- Integrated ESD protection.
- Easy power control.
- Designed for ISM operation (400 MHz to 500 MHz).
- Input integration for simple board design.
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.