BLP8G05S-200 transistor equivalent, power ldmos transistor.
* High efficiency
* Excellent ruggedness
* Excellent thermal stability
* Integrated ESD protection
* Easy power control
* Designed for ISM operati.
at frequencies from 400 MHz to 500 MHz.
Table 1. Typical performance
RF performance at Tcase = 25 C, IDq = 2 mA in an.
200 W LDMOS power transistor for base stations applications at frequencies from 400 MHz to 500 MHz.
Table 1. Typical performance
RF performance at Tcase = 25 C, IDq = 2 mA in an application circuit.
Test signal
f
VDS
PL(AV)
(MHz)
(V) (W)
CW.
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