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BLP8G27-10 Datasheet, NXP

BLP8G27-10 transistor equivalent, power ldmos transistor.

BLP8G27-10 Avg. rating / M : 1.0 rating-12

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BLP8G27-10 Datasheet

Features and benefits


* High efficiency
* Excellent ruggedness
* Designed for broadband operation
* Excellent thermal stability
* High power gain
* Integrated ESD prote.

Application

at frequencies from 700 MHz to 2700 MHz. Table 1. Application performance (multiple frequencies) Typical RF performance.

Description

10 W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Table 1. Application performance (multiple frequencies) Typical RF performance at Tcase = 25 C; IDq = 110 mA; in a class-AB application circu.

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TAGS

BLP8G27-10
Power
LDMOS
transistor
BLP8G27-5
BLP8G20S-80P
BLP8G21S-160PV
NXP

Manufacturer


NXP (https://www.nxp.com/)

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BLP8G27-10

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