logo

BLF9G38LS-90P Datasheet, NXP

BLF9G38LS-90P transistor equivalent, power ldmos transistor.

BLF9G38LS-90P Avg. rating / M : 1.0 rating-11

datasheet Download

BLF9G38LS-90P Datasheet

Features and benefits


* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Lower output capacitance for improved performanc.

Application

at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in the D.

Description

90 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in the Doherty application demo circuit. Test signal f VDS PL(AV) Gp D (.

Image gallery

BLF9G38LS-90P Page 1 BLF9G38LS-90P Page 2 BLF9G38LS-90P Page 3

TAGS

BLF9G38LS-90P
Power
LDMOS
transistor
BLF9G38-10G
BLF9G20LS-160V
BLF988
NXP

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts