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BLF988 - Power LDMOS transistor

General Description

A 600 W LDMOS RF power transistor for transmitter applications and industrial applications.

The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

Table 1.

Key Features

  • Excellent ruggedness (VSWR  40 : 1 through all phases).
  • Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W.
  • High power gain.
  • High efficiency.
  • Designed for broadband operation (400 MHz to 1000 MHz).
  • Internal input matching for high gain and optimum broadband operation.
  • Excellent reliability.
  • Easy power control.
  • Compliant to Dir.

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Datasheet Details

Part number BLF988
Manufacturer Ampleon
File Size 503.15 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF988 Datasheet

Full PDF Text Transcription for BLF988 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BLF988. For precise diagrams, and layout, please refer to the original PDF.

BLF988; BLF988S Power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for trans...

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le 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information Test signal f (MHz) PL(AV) (W) PL(M) (W) Gp D IMD3 (dB) (%) (dBc) RF performance in a common source 860 MHz narrowband test circuit 2-tone, class-AB pulsed, class-AB f1 = 860; f2 = 860.1 860 250 - 20.8 46 32 - 600 19.8 58 - 1.2 Features and benefits  Excellent ruggedness (VSWR  40 : 1 through all phases)  Optimum thermal behavior and reliability, Rth(j-c) = 0.