BFU530W transistor equivalent, npn wideband silicon rf transistor.
* Low noise, high breakdown RF transistor
* AEC-Q101 qualified
* Minimum noise figure (NFmin) = 0.6 dB at 900 MHz
* Maximum stable gain 18.5 dB at 900 MHz.
in a plastic, 3-pin SOT323 package.
The BFU530W is part of the BFU5 family of transistors, suitable for small signal to .
NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323 package.
The BFU530W is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.
1.2 Features and benefits.
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