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BFU530X
NPN wideband silicon RF transistor
Rev. 1 — 5 March 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.
The BFU530X is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.
1.2 Features and benefits
Low noise, high breakdown RF transistor AEC-Q101 qualified Minimum noise figure (NFmin) = 0.7 dB at 900 MHz Maximum stable gain 22 dB at 900 MHz 11 GHz fT silicon technology
1.3 Applications
Applications requiring high supply voltages and high breakdown voltages Broadband amplifiers up to 2 GHz Low noise amplifiers for ISM applications ISM band oscillators
1.
BFU530X Datasheet
