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A5G35H120N Datasheet, NXP

A5G35H120N transistor equivalent, airfast rf power gan transistor.

A5G35H120N Avg. rating / M : 1.0 rating-12

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A5G35H120N Datasheet

Features and benefits


* High terminal impedances for optimal broadband performance
* Improved linearized error vector magnitude with next generation signal
* Able to withstand ext.

Application

requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3800 MHz. This part is ch.

Description

This 18 W asymmetrical Doherty RF power GaN amplifier is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3800 MHz. This part is characterized and performa.

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TAGS

A5G35H120N
Airfast
Power
GaN
Transistor
A5G35S004N
A5G35S008N
A5G38H045N
NXP

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