A5G35H120N transistor equivalent, airfast rf power gan transistor.
* High terminal impedances for optimal broadband performance
* Improved linearized error vector magnitude with next generation signal
* Able to withstand ext.
requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3800 MHz.
This part is ch.
This 18 W asymmetrical Doherty RF power GaN amplifier is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3800 MHz.
This part is characterized and performa.
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