A5G19H605W19N Datasheet, NXP

* High terminal impedances for optimal broadband performance
* Advanced high performance in-package Doherty
* Improved linearized error vector magnitude with .

requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1995 MHz. This part is ch.

This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1995 MHz. This part is characterized and performa.

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A5-5

A500

A5000

A500K050

A500K130

A500K180

A500K270