A5G19H605W19N
A5G19H605W19N is Airfast RF Power GaN Transistor manufactured by NXP Semiconductors.
description
This 85 W asymmetrical Doherty RF power Ga N transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1995 MHz.
This part is characterized and performance is guaranteed for applications operating in the 1930 to 1995 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
2 Features and benefits
- High terminal impedances for optimal broadband performance
- Advanced high performance in-package Doherty
- Improved linearized error vector magnitude with next generation signal
- Able to withstand extremely high output VSWR and broadband operating conditions
- Plastic package
3 Typical performance
Table 1. 1900 MHz
- Typical Doherty single-carrier W-CDMA production test fixture performance VDD = 48 Vdc, IDQA = 300 m A, VGSB =
- 5.0 Vdc, Pout = 85 W Avg., input signal PAR = 9.9 d B @ 0.01% probability on CCDF[1]
Frequency
Gps (d B)
ηD
Output PAR
ACPR
(%)
(d B)
(d Bc)
1930 MHz
- 29.2
1960 MHz
- 30.2
1995 MHz
- 31.2
[1] All data measured with device soldered to NXP production test fixture.
NXP Semiconductors
4 Pinning information
Airfast RF Power Ga N...
