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NTE5855 Datasheet Preview

NTE5855 Datasheet

(NTE5850 - NTE5869) Silicon Power Rectifier Diode

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NTE5850 thru NTE5869
Silicon Power Rectifier Diode, 6 Amp
Description and Features:
The NTE5850 through NTE5869 are low power general purpose rectifier diodes in a DO4 type pack-
age designed for battery chargers, converters, power supplies, and machine tool controls.
Features:
D High Surge Current Capability
D High Voltage Available
D Designed for a Wide Range of Applications
D Available in Anode–to–Case or Cathode–to–Case Style
Ratings and Characteristics:
Average Forward Current (TC = +158°C Max), IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Maximum Forward Surge Current, IFSM
50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134A
60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141A
Fusing Current, I2t
50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90A2s
60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141A2s
Fusing Current, I2pt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1270A2ps
Maximum Reverse Recovery Voltage Range, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 to 1000V
Voltage Ratings: (TJ = +175°C)
NTE Type Number
Cathode
to Case
5850
Anode
to Case
5851
5852 5853
5854
5856
5855
5857
5858
5860
5859
5861
5862 5863
5866
5868
5867
5869
VRRM–Max
Repetitive Peak
Reverse Volt.
(V)
50
100
200
300
400
500
600
800
1000
VRSM–Max
Non–Repetitive Peak
Reverse Voltage
(V)
75
150
275
385
500
613
725
950
1200
VR–Max.
Direct Reverse
Voltage
(V)
50
100
200
300
400
50
600
800
1000
VR(SR)
Minimum Avalanche
Voltage
(V)
500
613
725
950
1200
IRM–Max
Reverse Current
Rated VRRM
(mA)
12
12
12
12
12
12
12
12
12




NTE Electronics

NTE5855 Datasheet Preview

NTE5855 Datasheet

(NTE5850 - NTE5869) Silicon Power Rectifier Diode

No Preview Available !

www.DataSheet4U.com
Electrical Specifications:
Parameter
Symbol
Test Conditions
Maximum Average Forward Current
Maximum RMS Forward Current
Maximum Peak OneCycle
NonRepetitive Surge Current
IF (AV)
IF(RMS)
IFSM
180° sinusoidal condition, TC = +158°C Max
t = 10ms Sinusoidal Half Wave,
t = 8.3ms No voltage reapplied
Maximum I2t for Individual Device
Fusing
Maximum I2pt
I2t
I2pt
t = 10ms 100% rated voltage reapplied,
t = 8.3ms TJ = +175°C
t = 10ms 100% rated voltage reapplied,
t = 8.3ms Initial TJ = +175°C
t = 0.1 to 10ms, No voltage reapplied, Note 1
Maximum Peak Forward Voltage
VFM
Maximum Value of Threshold
Voltage
VM (TO)
Maximum Value of Forward Slope
Resistance
rt
Note 1. I2t for time tx = I2Ǩt S Ǩtx
IFM = 19A, TJ = +25°C
TJ = +175°C
TJ = +175°C
Rating
6
9.5
134
141
159
167
127
116
1270
1.10
0.60
Unit
A
A
A
A
A
A
A2s
A2s
A2pt
V
V
17.2 m
ThermalMechanical Specifications:
Parameter
Symbol
Test Conditions
Rating Unit
Maximum Operation Junction Temperature
Maximum Storage Temperature
Maximum Internal Thermal Resistance
JunctiontoCase
Thermal Resistance, CasetoSink
Mounting Torque
Approximate Weight
TJ
Tstg
RthJC
DC operation
65 to + 175
65 to + 200
2.5
°C
°C
K/W
RthCS
T
wt
Mounting surface flat, smooth and
greased
0.25
K/W
Nonlubricated threads
1.2 1.5 mN
(10.5 13.5) (inlb)
11 (0.25) g (oz)
.437
(11.1)
Max
.250 (6.35) Max
.060 (1.52)
Dia Min
.175 (4.45) Max
1032 NF2A
.424 (10.8)
Dia Max
.405
(10.3)
Max
1.250 (31.75) Max
.453
(11.5)
Max


Part Number NTE5855
Description (NTE5850 - NTE5869) Silicon Power Rectifier Diode
Maker NTE Electronics
Total Page 2 Pages
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