Diode Datasheet | Specifications & PDF Download

NOT RECOMMENDED FOR NEW DESIGN USE AZ1117C or AZ1117I Pb Lead-Free AZ1117 1A LOW DROPOUT LINEAR REGULATOR Description The AZ1117 is a series of lo

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74HC595 8-BIT SHIFT REGISTER WITH 8-BIT OUTPUT REGISTER Description The 74HC595 is an high speed CMOS device. An eight bit shift register accpets dat

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1N4728 THRU 1N4764 ZENER DIODES FEATURES DO-41 Glass ♦ Silicon Planar Power Zener Diodes ♦ For use in stabilizing and clipping circuits with high pow

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www.DataSheet4U.com RF Diodes 1series Fast recovery Diodes (Silicon Epitaxial Planar) RF 1 series zExternal dimensions (Unit : mm) CPD 1.5 5.5 2.3

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S4VB60 Bridge Diodes 600V, 4A Feature ・Input/Outout In-line ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): S4VB Equivalent circuit Absol

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5.0SMCJ12A 5.0SMCJ170CA 5.0SMCJ12A 5.0SMCJ170CA SMD Transient Voltage Suppressor Diodes SMD Spannungs-Begrenzer-Dioden PPPM = 5000 W PM(AV)

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Features  Glass Passivated Die Construction  Ultra-Fast Recovery Time for High Efficiency  Surge Overload Rating to 30A Peak  High Current Capabil

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® WON-TOP ELECTRONICS Features  Diffused Junction  Low Forward Voltage Drop  High Current Capability  High Reliability  High Surge Current Capabi

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R SCHOTTKY BARRIER DIODE HBR2045 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 45 V 175 ℃ 0.6V （@Tj=125℃）   APPLICAT

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R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. 12F020 1． PC 、UPS 、 DC-DC 2． l l l l 3． TO-220( RoHS ) 4． 1. (A1) 2 . (K) 3. (A2

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® WON-TOP ELECTRONICS Features  Schottky Barrier Chip  Guard Ring for Transient and ESD Protection  Surge Overload Rating to 50A Peak  Low Power L

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( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com www.DataSheet4U.com

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www.eicsemi.com SB5150 ~ SB5200 TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 150 ~ 200 Volts IO : 5.0 A

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DIODE Type : 30D2 FEATURES * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability OUTLINE DRAWING Maximum Ratings Approx

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Power Diodes Controlled Avalanche Features: • • • • • • • For surface mounted application Metal to silicon rectifier, majority carrier conduction Low

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R SCHOTTKY BARRIER DIODE HBR10150S IF(AV) VRRM Tj VF(max) MAIN CHARACTERISTICS 10（2×5）A 150 V 175 ℃ 0.72V （@Tj=125℃）   APPLICATIONS 

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BSS138K 50V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 50V RDS(ON) Max 3.5Ω @ VGS = 10V ID Max TA = +25°C 0.31A Description and Appl

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