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2N7000 N−Ch, Enhancement Mode
Field Effect Transistor TO−92 Type Package
D
Features: D High Density Cell Design for Low RDS(ON) D Voltage Controlled Small Signal Switch D Rugged and Reliable D High Saturation Current Capability
G S
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Drain−Gate Voltage (RGS 1M), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Gate−Source Voltage, Continuous . . .
.V.G. S.
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2N7000 Datasheet
