2N6667 datasheet, transistors equivalent, NTE

Features and benefits

D DC Current Gain: hFE = 3000 (Typ) @ IC = 4A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 40V (Min) − 2N6666 = 60V (Min) − 2N6667 = 80V (Min) − 2N6668 D Lo.

Application

Features: D DC Current Gain: hFE = 3000 (Typ) @ IC = 4A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 40V (M.

Description

The 2N6666, 2N6667, and 2N6668 are silicon PNP Darlington power transistors in a TO−220 type package designed for general purpose amplifier and low−speed switching applications. Features: D DC Current Gain: hFE = 3000 (Typ) @ IC = 4A D Collector−.

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