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N-CHANNEL ENHANCEMENT MODE POWER MOSFET
2N6660
• VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0Ω • Fast Switching • Low Threshold Voltage (Logic Level) • Low CISS • Integral Source-Drain Body Diode • Hermetic Metal TO39 Package • High Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VDS Drain – Source Voltage
60V
VGS Gate – Source Voltage
±20V
ID
Continuous Drain Current
TC = 25°C
1.0A
IDM Pulsed Drain Current (1)
3.0A
PD
Total Power Dissipation at
TC ≤ 25°C
5W
De-rate TC > 25°C
40mW/°C
PD
Total Power Dissipation at
TA ≤ 25°C
725mW
De-rate TA > 25°C
5.
2N6660 Datasheet
