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2N6660 - N-Channel Enhancement-Mode Vertical DMOS FET

Description

2N6660 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a wellproven silicon-gate manufacturing process.

Features

  • Free from secondary breakdown.
  • Low power drive requirement.
  • Ease of paralleling.
  • Low CISS and fast switching speeds.
  • Excellent thermal stability.
  • Integral source-drain diode.
  • High input impedance and high gain.

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Datasheet Details

Part number 2N6660
Manufacturer Microchip
File Size 292.59 KB
Description N-Channel Enhancement-Mode Vertical DMOS FET
Datasheet download datasheet 2N6660 Datasheet

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2N6661 N-Channel Enhancement-Mode Vertical DMOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N6660 N-Channel, Enhancement-Mode, Vertical DMOS FET Features • Free from secondary breakdown • Low power drive requirement • Ease of paralleling • Low CISS and fast switching speeds • Excellent thermal stability • Integral source-drain diode • High input impedance and high gain Applications • Motor controls • Converters • Amplifiers • Switches • Power supply circuits • Drivers: relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc. Description 2N6660 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a wellproven silicon-gate manufacturing process.
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