2N6609 Datasheet | NTE Electronics

Description : The 2N6609 is a silicon PNP power transistors in a TO- 3 type package designed for high power audio, disk head positioners, and other linear applications. It can also be used in power switching circuits such as relay or solenoid drivers, DC to DC converters or inverters. Features : D High Safe Operating Area 150W @ 100V D pletely Characterized for Linear Operation D High DC Current Gain and Low Saturation Voltage: h FE = 15 (Min) @ 8A, 4V VCE(sat) = 1.4V (Max) @ IC = 8A, IB = 0.8A Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector- Emitter Voltage, VCEO - - - - - - - - - - . . . 140V Collector- Emitter Voltage, VCEX - - - - - - - - - - . . . 160V Collector- Base Voltage, VCBO - - - - - - - - - - . . . ....