2N5884 transistor equivalent, silicon power transistor.
D Low Collector−Emitter Saturation Voltage: VCE(sat) = 1V (Max) at IC = 15A D Excellent DC Current Gain: hFE = 20 − 100 @ IC = 10A
Absolute Maximum Ratings:
Collector−.
Features: D Low Collector−Emitter Saturation Voltage: VCE(sat) = 1V (Max) at IC = 15A D Excellent DC Current Gain: hFE.
The 2N5884 (PNP) and 2N5886 (NPN) are silicon complementary transistors designed for use in general purpose power amplifier and switching applications.
Features: D Low Collector−Emitter Saturation Voltage: VCE(sat) = 1V (Max) at IC = 15A D Excellen.
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