2N5880 transistor equivalent, complementary power transistor.
* Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 7.0A
* Execellent DC current Gain hFE = 20 - 100 at IC = 6.0A
Pin 1. Base 2. Emitte.
Features:
* Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 7.0A
* Execellent DC cur.
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