2N5882 transistor equivalent, silicon npn power transistor.
D Low Collector−Emitter Saturation Voltage: VCE(sat) = 1V (Max) at IC = 7A D Excellent DC Current Gain: hFE = 20 − 100 @ IC = 6A
Absolute Maximum Ratings:
Collector−Emi.
Features:
D Low Collector−Emitter Saturation Voltage: VCE(sat) = 1V (Max) at IC = 7A D Excellent DC Current Gain: hFE .
The 2N5882 is a silicon NPN transistor in a TO−3 type package designed for use in general purpose power amplifier and switching applications.
Features:
D Low Collector−Emitter Saturation Voltage: VCE(sat) = 1V (Max) at IC = 7A D Excellent DC Curren.
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