S7B803635M datasheet, sram equivalent, NETSOL

Features and benefits

* VDD = 2.5V(2.3V ~ 2.7V) or 3.3V(3.1V ~ 3.5V) Power Supply
* VDDQ = 2.3V~2.7V I/O Power Supply (VDD=2.5V) or 2.3V~3.5V I/O Power Supply (VDD=3.3V)
* Synchron.

Application

GW, BW, LBO, ZZ. Write cycles are internally selftimed and synchronous. Full bus-width write is done by GW, and each by.

Description

The S7B803635M and S7B801835M are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance. It is organized as 256K(512K) words of 36(18) bits and integrates address and control registers, a 2-bit burst address counter and .

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