S7B161835M datasheet, sram equivalent, NETSOL

Features and benefits

* VDD = 2.5V(2.3V ~ 2.7V) or 3.3V(3.1V ~ 3.5V) Power Supply
* VDDQ = 2.3V~2.7V I/O Power Supply (VDD=2.5V) or 2.3V~3.5V I/O Power Supply (VDD=3.3V)
* Synchron.

Application

GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each b.

Description

The S7B163635M and S7B161835M are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance. It is organized as 512K(1M) words of 36(18) bits and integrates address and control registers, a 2-bit burst address counter and a.

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