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S7A161830M Datasheet, NETSOL

S7A161830M sram equivalent, 512kx36 & 1mx18 sync-pipelined burst sram.

S7A161830M Avg. rating / M : 1.0 rating-11

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S7A161830M Datasheet

Features and benefits


* VDD = 1.8V (1.7V ~ 2.0V) or 2.5V(2.3V ~ 2.7V) or 3.3V(3.1V ~ 3.5V) Power Supply
* VDDQ = 1.7V~2.0V I/O Power Supply (VDD=1.8V) or 2.3V~2.7V I/O Power Supply (VD.

Application

GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each b.

Description

The S7A163630M and S7A161830M are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance. It is organized as 512K(1M) words of 36(18) bits and integrates address and control registers, a 2-bit burst address counter and a.

Image gallery

S7A161830M Page 1 S7A161830M Page 2 S7A161830M Page 3

TAGS

S7A161830M
512Kx36
1Mx18
Sync-Pipelined
Burst
SRAM
S7A163630M
S7A321830M
S7A323630M
NETSOL

Manufacturer


NETSOL
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