NP88N055NLE transistor equivalent, mos field effect transistor.
* Channel temperature 175 degree rated
* Super low on-state resistance RDS(on)1 = 5.2 mΩ MAX. (VGS = 10 V, ID = 44 A) RDS(on)2 = 6.3 mΩ MAX. (VGS = 5.0 V, ID = 44.
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Image gallery
TAGS
Manufacturer
Related datasheet