NP88N055EHE transistor equivalent, mos field effect transistor.
* Channel temperature 175 degree rated
* Super low on-state resistance RDS(on) = 5.3 mΩ MAX. (VGS = 10 V, ID = 44 A)
* Low input capacitance Ciss = 7600 pF TY.
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
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