Datasheet4U Logo Datasheet4U.com

NP82N055EHE - MOS FIELD EFFECT TRANSISTOR

Download the NP82N055EHE datasheet PDF. This datasheet also covers the NP82N055CHE variant, as both devices belong to the same mos field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Description

These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Channel temperature 175 degree rated.
  • Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A).
  • Low Ciss: Ciss = 3500 pF TYP.
  • Built-in gate protection diode 5 NP82N055KHE (TO-220AB).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NP82N055CHE_NEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NP82N055EHE
Manufacturer NEC
File Size 104.08 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet NP82N055EHE Datasheet

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N055CHE,NP82N055DHE,NP82N055EHE,NP82N055KHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP82N055CHE NP82N055DHE NP82N055EHE PACKAGE TO-220AB TO-262 TO-263 (MP-25ZJ) TO-263 (MP-25ZK) FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low Ciss: Ciss = 3500 pF TYP.
Published: |