NP82N055EHE transistor equivalent, mos field effect transistor.
* Channel temperature 175 degree rated
* Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A)
* Low Ciss: Ciss = 3500 pF TYP.
* Bui.
ORDERING INFORMATION
PART NUMBER NP82N055CHE NP82N055DHE NP82N055EHE PACKAGE TO-220AB TO-262 TO-263 (MP-25ZJ) TO-263 (.
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