NP80N055KHE Key Features
- Channel temperature 175 degree rated
- Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A)
- Low input capacitance Ciss = 2400 pF TYP
- Built-in gate protection diode (TO-262)
| Manufacturer | Part Number | Description |
|---|---|---|
NEC |
NP80N055 | Switching N-Channel Power MOS FET |
NEC |
NP80N055CLE | Switching N-Channel Power MOSFET |
NEC |
NP80N055DLE | Switching N-Channel Power MOSFET |
NEC |
NP80N055ELE | Switching N-Channel Power MOSFET |
Renesas |
NP80N055MDG | N-CHANNEL POWER MOS FET |