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K2372 - 2SK2372

Description

designed for high voltage switching applications.

Features

  • Low On-Resistance 20.0 ± 0.2 1.0 15.7 MAX. 4 3.2 ± 0.2 4.7 MAX. 1.5 7.0 2SK2368: RDS(ON) = 0.27 Ω (VGS = 13 V, ID = 10 A).
  • Low Ciss Ciss = 3600 pF TYP.
  • High Avalanche Capability Ratings 1 3.0 ± 0.2 2 3.

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Datasheet Details

Part number K2372
Manufacturer NEC
File Size 145.45 KB
Description 2SK2372
Datasheet download datasheet K2372 Datasheet

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Other Datasheets by NEC

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2371/2SK2372 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor www.DataSheet4U.com PACKAGE DIMENSIONS (in millimeters) designed for high voltage switching applications. FEATURES • Low On-Resistance 20.0 ± 0.2 1.0 15.7 MAX. 4 3.2 ± 0.2 4.7 MAX. 1.5 7.0 2SK2368: RDS(ON) = 0.27 Ω (VGS = 13 V, ID = 10 A) • Low Ciss Ciss = 3600 pF TYP. • High Avalanche Capability Ratings 1 3.0 ± 0.
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