Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K2375. For precise diagrams, and layout, please refer to the original PDF.
Power F-MOS FETs 2SK2375 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary bre...
View more extracted text
aranteed q High-speed switching q Low ON-resistance q No secondary breakdown unit: mm 15.5±0.5 4.5 φ3.2±0.1 10.0 3.0±0.3 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 5˚ 26.5±0.5 5˚ 23.4 22.0±0.5 2.0 1.2 5˚ 18.6±0.5 5˚ 5˚ 4.0 2.0±0.2 1.1±0.1 2.0 0.7±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 900 ±30 ±8 ±16 60 100 3 150 −55 to +150 Unit V V 5.45±0.3 3.3±0.3 0.7±0.1 5.45±0.3 5.5±0.
K2375 Datasheet
