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K2362 - 2SK2362

General Description

designed for high voltage switching applications.

Key Features

  • Low On-Resistance 2SK2361: RDS (on) = 0.9 Ω (VGS = 10 V, ID = 5.0 A) 2SK2362: RDS (on) = 1.0 Ω (VGS = 10 V, ID = 5.0 A).
  • Low Ciss Ciss = 1050 pF TYP.
  • High Avalanche Capability Ratings.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
K2364 2SK2364
K2365 2SK2365
K2368 2SK2368
K2341 2SK2341
K2354 2SK2354
K2370 2SK2370
K2371 2SK2371
K2372 2SK2372

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2361/2SK2362 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2361/2SK2362 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-Resistance 2SK2361: RDS (on) = 0.9 Ω (VGS = 10 V, ID = 5.0 A) 2SK2362: RDS (on) = 1.0 Ω (VGS = 10 V, ID = 5.0 A) • Low Ciss Ciss = 1050 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage (2SK2361/2SK2362) VDSS 450/500 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID (DC) ±10 A Drain Current (pulse)* ID (pulse) ±40 A Total Power Dissipation (Tc = 25 ˚C) PT1 100 W Total Power Dissipation (TA = 25 ˚C) PT2 3.