K2365 Datasheet, NEC

* Low On-Resistance 2SK2365: RDS(on) = 0.5 Ω (VGS = 10 V, ID = 5.0 A) 2SK2366: RDS(on) = 0.6 Ω (VGS = 10 V, ID = 5.0 A)
* Low Ciss Ciss = 1 600 pF TYP.
* High.

FEATURES
* Low On-Resistance 2SK2365: RDS(on) = 0.5 Ω (VGS = 10 V, ID = 5.0 A) 2SK2366: RDS(on) = 0.6 Ω (VGS = 10 .

The 2SK2365, 2SK2365-Z/2SK2366, 2SK2366-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES
* Low On-Resistance 2SK2365: RDS(on) = 0.5 Ω (VGS = 10 V, ID = 5.0 A) 2SK2366: RDS(on) = 0.6 Ω (VGS = 1.