* Low On-Resistance 2SK2361: RDS (on) = 0.9 Ω (VGS = 10 V, ID = 5.0 A) 2SK2362: RDS (on) = 1.0 Ω (VGS = 10 V, ID = 5.0 A)
* Low Ciss Ciss = 1050 pF TYP.
* Hig.

FEATURES
* Low On-Resistance 2SK2361: RDS (on) = 0.9 Ω (VGS = 10 V, ID = 5.0 A) 2SK2362: RDS (on) = 1.0 Ω (VGS = 1.

The 2SK2361/2SK2362 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES
* Low On-Resistance 2SK2361: RDS (on) = 0.9 Ω (VGS = 10 V, ID = 5.0 A) 2SK2362: RDS (on) = 1.0 Ω (VGS = 10 V, ID = 5.0 A)

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K2325TJ650

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K2334

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K2350

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