10.0±0.3
* Low On-Resistance 2SK2363: RDS (on) = 0.5 Ω (VGS = 10 V, ID = 4.0 A) 2SK2364: RDS (on) = 0.6 Ω (VGS = 10 V, ID = 4.0 A) 3.2±0.2 4.5±0.2 2.7±0.2 Drain .

PACKAGE DIMENSIONS (in millimeter) FEATURES 10.0±0.3
* Low On-Resistance 2SK2363: RDS (on) = 0.5 Ω (VGS = 10 V, .

The 2SK2363/2SK2364 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) FEATURES 10.0±0.3
* Low On-Resistance 2SK2363: RDS (on) = 0.5 Ω (VGS = 10 V, ID = 4.0 A) 2SK2364:.

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