2SK2368
DESCRIPTION
The 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter)
15.7 MAX. 4 3.2±0.2 4.7 MAX. 1.5
FEATURES
2SK2368: RDS (on) = 0.6 Ω (VGS = 10 V, ID = 8.0 A)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (2SK2367/2SK2368) Gate to Source Voltage Drain Current (DC) Drain Current (pulse)- Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current-
- Single Avalanche Energy-
- - PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID (DC) ID (pulse) PT1 PT2 Tch Tstg IAS EAS 450/500 ± 30 ± 15 ± 60 120 3.0 150 15 161 V V A A W W ˚C A m J
19 MIN. 3.0±0.2
- Low Ciss Ciss = 1 600 p F TYP.
- High Avalanche Capability Ratings
2.2±0.2 5.45
1.0±0.2 5.45
4.5±0.2
2SK2367: RDS (on) = 0.5 Ω (VGS = 10 V, ID = 8.0 A)
20.0±0.2 6.0
0.6±0.1
2.8±0.1
1. Gate 2. Drain 3. Source 4. Fin (Drain)
MP-88
Drain
- 55 to...
