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2SK2368 - N-Channel MOSFET

General Description

The 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

15.7 MAX.

4 3.2±0.2 4.7 MAX.

Key Features

  • 2SK2368: RDS (on) = 0.6 Ω (VGS = 10 V, ID = 8.0 A).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2367/2SK2368 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) 1.0 15.7 MAX. 4 3.2±0.2 4.7 MAX. 1.5 FEATURES 2SK2368: RDS (on) = 0.6 Ω (VGS = 10 V, ID = 8.0 A) ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage (2SK2367/2SK2368) Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID (DC) ID (pulse) PT1 PT2 Tch Tstg IAS EAS 450/500 ± 30 ± 15 ± 60 120 3.