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2SK2365 - N-Channel MOSFET

2SK2365 Product details

Description

The 2SK2365, 2SK2365-Z/2SK2366, 2SK2366-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching 3.0 ± 0.3 PACKAGE DIMENSIONS (in millimeters) 10.6 MAX.3.6 ± 0.2 10.0 5.9 MIN.12.7 MIN.15.5 MAX.applications.4.8 MAX.1.3 ± 0.2 FEATURES Low On-Resistance 2SK236

Features

  • Low On-Resistance 2SK2365: RDS(on) = 0.5 Ω (VGS = 10 V, ID = 5.0 A) 2SK2366: RDS(on) = 0.6 Ω (VGS = 10 V, ID = 5.0 A) 4 1 2 3.
  • Low Ciss Ciss = 1 600 pF TYP.
  • High Avalanche Capability Ratings.
  • Isolate TO-220 Package ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain t.

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Datasheet Details

Part number
2SK2365
Manufacturer
NEC
File Size
121.38 KB
Datasheet
2SK2365_NEC.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET NEC
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