2SK2365
2SK2365 is N-Channel MOSFET manufactured by NEC.
DESCRIPTION
The 2SK2365, 2SK2365-Z/2SK2366, 2SK2366-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching
3.0 ± 0.3
PACKAGE DIMENSIONS (in millimeters)
10.6 MAX. 3.6 ± 0.2 10.0
5.9 MIN. 12.7 MIN. 15.5 MAX. applications.
4.8 MAX. 1.3 ± 0.2
FEATURES
- Low On-Resistance
2SK2365: RDS(on) = 0.5 Ω (VGS = 10 V, ID = 5.0 A) 2SK2366: RDS(on) = 0.6 Ω (VGS = 10 V, ID = 5.0 A)
4 1 2 3
- Low Ciss Ciss = 1 600 p F TYP.
- High Avalanche Capability Ratings
- Isolate TO-220 Package
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (2SK2365/2SK2366) Gate to Source Voltage Drain Current (DC) Drain Current (pulse)- Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current-
- Single Avalanche Energy-
- - PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 450/500 ± 30 ± 10 ± 40 75 1.5 150 10 143 V V A A W W ˚C A m J
6.0 MAX.
1.3 ± 0.2 0.75 ± 0.1 2.54
0.5 ± 0.2 2.8 ± 0.2
1. Gate 2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB
MP-25 (TO-220)
(10.0) 4
1.0 ± 0.5 8.5 ± 0.2 1.5 MAX.
4.8 MAX. 1.3 ± 0.2
1.4 ± 0.2
- 55 to +150 ˚C
1.0 ± 0.3 (2.54) (2.54) 1 2 3
1.1 ± 0.4 3.0 ± 0.5
R) ) .5 R (0 0.8 (
0.5 ± 0.2
- - Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
2.8 ± 0.2
1. 2. 3. 4.
Gate Drain Source Fin (Drain)
MP-25Z (SURFACE MOUNT TYPE)
Drain
Body Diode...
